APS Fellowship

The Forum on Industrial and Applied Physics is proud to present a list of members nominated by FIAP and elected to Fellowship in the American Physical Society. Each new fellow is elected after careful and competitive review and recommendation by the FIAP Fellowship Committee, additional review by the APS Fellowship Committee and final approval by the full APS Council.
Gray Arrow Fellowship Criteria for Industrial Physicists format_pdf
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Gray arrow FIAP Deadline for APS Fellowship Nomination: Monday, June 3, 2019
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APS Fellows Nominated by FIAP  

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Abernathy, Cammy R. [2009]
Affiliation not available
Citation: For contributions to the development of compound semiconductor materials growth using molecular beam epitaxy.


Abraham, David W. [2014]
IBM T.J. Watson Research Center
Citation: For advancing the science and technology of thermal measurement and control in magnetic storage systems.


Adler, Edward [2016]
Boeing Company
Citation: For significant scientific advancement in the application of plasma-based electronic systems to advanced space communications, and for the advancement of systems and processes necessary to transition novel physics into technical innovation, both in government and private sector capacities.


Aharoni, Herzl [2007]
Ben-Gurion University of the Negev
Citation: Pioneering contributions to the invention, research, and development of two- and multi-terminal Single Crystal Silicon Light Emitting Devices (SiLED's) for all-silicon intergrated optoelectronic systems, combining semiconductor physics and standard IC technology.


Ahrenkiel, Richard K. [2000]
National Renewable Energy Laboratory
Citation: For pioneering and innovative work in the techniques and analysis of recombination/minority-carrier lifetime and transport in semiconductors and for outstanding contributions to numerous areas of condensed matter physics.


Akinwande, Deji [2017]
University of Texas at Austin
Citation: For contributions to the physical study and development of scalable uniform monolayer graphene synthesis on wafer-scale substrates, and the realization of GHz flexible and wearable two-dimensional devices, circuits and systems.


Aksyuk, Vladimir [2014]
National Institute of Standards and Technology
Citation: For contributions to the development of integrated photonic and mechanical microsystems, for pioneering work in using such systems to enable both telecommunications and novel nanoscale, high-throughput, measurement methods, and for contributions to the understanding of the Casimir force.


Alam, Muhammad [2008]
Purdue University
Citation: For fundamental contributions to and innovative computational models for Electronic Transport in Spatially and Temporally Random Systems.


Alpay, Pamir [2013]
University of Connecticut
Citation: For contributions to the understanding of domain phenomena and role of defects in ferroelectric thin films, the development of compositionally graded ferroelectrics for dielectrically tunable devices, and the fundamentals of infrared detectors and related devices.


Anway, Carol E. [2018]
Boeing Company
Citation: For revolutionary advances in the areas of computational industrial physics, specifically in advanced simulation tools enabling modeling and predictive behavior of sensor and communication architectures in highly complex systems.


Appenzeller, Joerg [2013]
Purdue University
Citation: For pioneering contributions to the physics, technology, and modeling of one and two-dimensional transistors and circuits.


Arghavani, Reza [2009]
Applied Materials Inc
Citation: For leading the team that created a series of Stress-Tunable dielectrics for MEMORY and LOGIC technologies, also for introducing first ALD High-k into INTEL development FABs, which led to the introduction of High-k/Metal Gate into 45nm INTEL Microprocessor.


Atkinson, William [2011]
Boeing Company
Citation: For academic contributions in the areas of nuclear physics and for substantial applications of radiation technology to spaceborne applications in the aerospace community.


Bandyopadhyay, Supriyo [2005]
Virginia Commonwealth University
Citation: For pioneering contributions to device applications of nanostructures.


Banerjee, Kaustav [2014]
University of California, Santa Barbara
Citation: For seminal applied physics research on nanoscale materials, devices, interconnects, and circuits towards realizing ultra-low power electronics.


Banerjee, Sanjay Kumar [2006]
University of Texas
Citation: For contributions to silicon and silicon-germanium heterostructure MOS transistors and three- dimensional integrated-circuit technology.


Barrett, Joseph John [1997]
Allied Signal, Inc.
Citation: For his pioneering contributions in the development and applications of new Raman and infrared techniques and, in particular, photoacoustic Raman spectroscopy for gas analysis and infrared sensors for avionics applications.


Bauer, Matthias [2017]
Applied Materials
Citation: For contributions to low temperature epitaxy of group IV alloys, in situ-doping with degenerate doping levels, highly strained alloys and novel techniques to achieve selectivity such as cyclic deposition and etch.


Beausoleil, Raymond [2012]
Hewlett-Packard Laboratories
Citation: For contributions to basic research in nonlinear and quantum optics with applications to information technology


Belk, John H. [2013]
Boeing Company
Citation: For ground breaking condensed matter research within aerospace and significant advancement of nanotechnologies applications within domestic and international industry.


Bennett, Herbert Stanton [2004]
National Institute of Standards and Technology
Citation: For insights into solid-state materials and the development of physical models that led to improved performance of electronic, magnetic, and optical materials


Bernius, Mark T. [2014]
Affiliation not available
Citation: For versatility in successfully commercializing new product technology starting from fundamental physics to final product form in the fields of organic-based LEDs, solar photovoltaics (PVs), composite materials, and thermal science and technology.


Bhattacharya, Pallab [2005]
University of Michigan
Citation: For pioneering contributions to molecular beam epitaxy and device applications of strained heterostructures, physics and development of quantum dot optoelectronic devices and integrated optoelectronics.


Biefeld, Robert M [2003]
Sandia National Laboratories
Citation: For contributions to MOCVD deposition of compound semiconductors for optoelectronic devices.


Black, Charles T. [2009]
Brookhaven National Laboratory
Citation: For pioneering contributions to the integration of nanometer-scale polymer self-assembly in the fabrication of high-performance semiconductor microelectronic devices.


Boggess, Jr, Thomas F. [2013]
University of Iowa
Citation: For extensive and influential use of ultrafast optical probes to determine carrier dynamics in infrared semiconductors, superlattices, and quantum dots, especially in narrow-gap semiconductors, aiding their application to infrared detectors, lasers and scene projectors.


Boily, Robert [2018]
Inforex Inc.
Citation: For outstanding accomplishments over a 40-year career in physical science and technology, especially in the fields of electronics, photonics, advanced materials, imaging and energy.


Bower, Robert W. [2004]
Affiliation not available
Citation: For the invention and development of the self-aligned gate transistor, and innovative contributions in the CCD, metal silicide and three-dimentional device technologies.


Boykin, Timothy [2011]
University of Alabama, Huntsville
Citation: For contributions to the theory and full-bandstructure modeling of semiconductor nanostructures.


Braginski, Aleksander Ignace [2003]
Unavailable
Citation: For contributions to magnetic materials and applied superconductivity.


Branz, Howard [2012]
NREL
Citation: For seminal research on thin film silicon: defects, metastability, growth processes, nanostructuring, and solar cells


Bratkovsky, Alexander Mikhailovich [2005]
Hewlett-Packard Laboratories
Citation: For contributions to the theory of magnetoresistance and spin injection and design of electronic and spintronic nanodevices.


Brown, April [2011]
Duke University
Citation: For outstanding contributions to development and application of molecular beam epitaxy to the formation advanced device structures, with particular contributions to the advancement of the strained heterostructures forming modern microwave devices.


Brown, Elliott R. [2007]
University of California, Los Angeles
Citation: For breakthroughs in THz science and technology including new solid-state coherent sources: (1) resonant-tunneling oscillators, and (2) photomixers; new detectors based on single-crystal, semimetal-semiconductor junctions; and high-resolution spectroscopy of solids.


Brown, Gail [2007]
Wright Patterson Air Force Base
Citation: For contributions to the fundamental physics and development of "quantum confined" or "quantum well" semiconductor heterostructure materials for applications in high-performance infrared detectors


Brown, Robert William [1999]
Case Western Reserve University
Citation: For industrial research and development advancing the performance of the magnetic-field system in magnetic resonance imaging, and for contributions to the knowledge, applications and teaching of MRI.


Brown, Robert G.W. [2016]
American Institute of Physics
Citation: For leadership and pioneering contributions in research, development, and technology transfer of many commercially important optoelectronic concepts, devices, and applications.


Cahay, Marc [2012]
Affiliation not available
Citation: For seminal contributions to understanding transport properties of mesoscopic systems and for pioneering work in spintronic devices


Carlson, J David [2004]
Lord Corporation
Citation: For contributions to controllable magnetorheological fluids, devices and systems.


Cerrina, Francesco [2001]
University of Wisconsin, Madison
Citation: For innovative physics applications in the domains of lithography, x-ray optics and microscopy.


Challener, William A. [2013]
General Electric Company
Citation: For contributions to the understanding of surface plasmon physics and its application to data storage and biosensing.


Chan, Siu-Wai [2018]
Columbia University
Citation: For observing and understanding the grain boundary dislocation motion in materials, providing a seminal impact on superconducting thin film boundary devices, and inventing a novel ecological synthesis technique of nano-crystals oxides for catalysis applications.


Chen, Tze-Chiang [2005]
IBM
Citation: For contributions to the science and technology of double-polysilicon bipolar transistors.


Cheng, David C. [1999]
IBM Almaden Research Center
Citation: For outstanding contributions to optical and magnetic recording technologies, producing broad impacts in the data storage industry, especially in the frontiers of high data rate and high density recording.


Cheng, Yang-Tse [2005]
General Motors Research and Development Center
Citation: For deep insights into the relationship between nanoindentation scaling behavior, the work of indentation, and the mechanical properties of atomically engineered surfaces.


Choi, Kwong Kit [2000]
US Army Research Laboratory
Citation: For contributions to the foundation and development of quantum well infrared technology, the discovery of new quantum noise properties, and the pioneering application of excitation hot-electron spectroscopies in quantum well studies.


Chu, Sung Nee George [2006]
Multiplex INC
Citation: For contributions to the development of lasers and photodiodes for optical fiber communication systems.


Cleveland, Jason [2011]
Asylum Research
Citation: For remarkable and lasting contributions to the field of scanning probe microscopy, both academic and commercial.


Cline, Harvey [1996]
General Electric R& D Laboratories
Citation: For sustained and significant applications of physics to semiconductor processing and medical imaging, most notably thermomigration production of vertical pn junctions and 3-D medical display algorithms for X-ray CT and MRI.


Collins, Robert W. [2013]
University of Toledo
Citation: For advancing the understanding of the optical properties and structures of thin film materials and devices, for innovations in real-time spectroscopic ellipsometry, and for leadership of research collaborations of industrial, government, and university laboratories.


Colombo, Luigi [2014]
Texas Instruments Incorporated
Citation: For contributions in research, development, and production of many commercially-important thin-film materials including HgCdTe for infrared detectors, CVD BaSrTiO3 for integrated-circuit capacitors, HfSiON and SiON FET gate-dielectric materials, and CVD graphene on Cu.


Coltrin, Michael E. [2002]
Sandia National Laboratories
Citation: For contributions to the fundamental understanding of the gas-phase and surface chemical processes in the chemical vapor deposition of semiconductor materials.


Copel, Matthew Warren [2002]
TJ Watson Research Laboratory
Citation: For contributions to the development of ion beam analytical methods and to the fundamental understanding of the structure, properties and reactions of electronic materials.


Coufal, Hans Juergen [2004]
IBM Almaden Research Center
Citation: For contributions to detection techniques for photothermal and photoacoustic phenomena, and to optical data storage.


Cummings, Peter T. [2005]
Vanderbilt University
Citation: For contributions to the molecular-level understanding of industrially relevant fluids and processes and for sustained leadership in applied molecular modeling and computational nanoscience.


Cutler, Leonard S. [1996]
Hewlett-Packard Laboratories
Citation: For fundamental applications of physics in the development of precision, commercial atomic frequency standards and clocks, and the two-frequency laser interferometer, an essential tool in modern integrated-circuit manufacturing.


Dalal, Vikram [2010]
Iowa State University
Citation: For pioneering applied research in physics of thin film photovoltaic materials and devices and for invention of industrially important photovoltaic devices.


Deen, M. Jamal [2008]
McMaster University
Citation: For significant contributions to noise and physics-based modeling of semiconductor devices and innovations in experiments.


del Alamo, Jesus A. [2014]
Massachusetts Institute of Technology
Citation: For fundamental contributions to the development of III-V compound semiconductor electronics.


Demkov, Alexander A. [2006]
University of Texas, Austin
Citation: For contributions to the development of the materials theory of oxides and their interfaces, as applied to CMOS technology development.


Disko, Mark M. [2013]
ExxonMobil Research and Engineering Company
Citation: For contributions to advanced materials characterization at the nanoscale and novel gas sensing techniques, together with leadership, in an industrial setting.


Doering, Robert R. [2009]
Texas Instruments Inc.
Citation: For outstanding leadership in integrated-circuit device scaling and many other important areas of semiconductor industry research and development, including pre-competitive collaborations between industry, government, and academic physics and engineering.


Doyle, Barney L. [2000]
Sandia National Laboratories
Citation: For the invention of numerous Micro-Ion Bean Analysis techniques and their innovative application to solid state physics, fusion energy, materials science and radiation effects of semiconductors.


Duggan, Jerome Lewis [2000]
University of North Texas
Citation: For outstanding contributions in the application of low energy nuclear technology for analysis in the semiconductor, metals, and geophysics industries, and for initiating an international conference as a forum for the interaction of industrial and academic physicists.


Dupuis, Russell D. [2003]
University of Texas, Austin
Citation: For development of MOCVD deposition of semiconductors and room-temperature quantum-well lasers.


Dylla, Henry Frederick [2001]
Thomas Jefferson National Accelerator Facility
Citation: For sustained contributions to the surface science of materials and the design of ultrahigh vacuum systems that have enabled a new generation of particle accelerators, plasma devices and materials processing systems.


Eastman, Lester Fuess [2001]
Cornell University
Citation: For pioneering contributions to the concepts of ballistic transport and piezoelectric doping in ultra-small III-V heterojunction transistors for applications in high-speed and microwave power devices and circuits and for leadership in transitioning electric.


Edelheit, Lewis S. [2001]
General Electric Company
Citation: For outstanding technical contributions to projection radiography and fast-scan, 'fan-beam' computed X-ray tomography systems, and for leadership in bringing world-class commercial medical imaging systems to the market.


Evans, Dean [2015]
Air Force Research Laboratory - Wright Patterson AFB
Citation: For contributions in the photorefractive field leading to an understanding of the physics and defect structure needed to mature these crystals for applications, and for work in the physical understanding and development of ferroelectric nanoparticles.


Fanciulli, Marco [2015]
University of Milano, Bicocca
Citation: For outstanding contributions in the growth and characterization of materials and nanostructures for emerging devices for information processing.


Feldkamp, Lee A. [1996]
Ford Motor Company
Citation: For contributions in the application of physics to practical automotive control systems and computed tomography and to fundamental understanding of electron spectroscopies.


Fischetti, Massimo Vincenzo [1996]
IBM T.J. Watson Research Center
Citation: For the development of first-principle modeling that predicts accurately the performance of sub-micron semiconductor devices.


Fisher, Galen B. [2004]
Delphi Research Laboratories
Citation: For distinguished research in heterogeneous catalysis, using surface science techniques and principles.


Fleetwood, Daniel Mark [2001]
Vanderbilt University
Citation: For important and broad-based contributions to the understanding of radiation effects and low-frequency noise in microelectronic materials and devices.


Flory, Curt A. [1997]
Hewlett-Packard Laboratories
Citation: For the imaginative use of theoretical physics in the analysis and creation of precision frequency standards, microwave sources, acoustic signal processing and sensing devices, and mass spectrometry instrumentation.


Folkins, Jeffrey J. [1999]
Xerox Corporation
Citation: For applications of physics to electrophotography resulting in major innovations in the design of development subsystems and in color Xerographic marking systems.


Friedlaender, Fritz Josef [1992]
Purdue University
Citation: For contributions to the understanding of magnetization processes , magnetic devices, and device physics.


Galloway, Kenneth Franklin [2002]
Vanderbilt University
Citation: For extensive and substantive contributions in applied physics and engineering science that have yielded an improved understanding of radiation effects in solid-state devices.


Gangopadhyay, Shubhra Mukerjee [2003]
Texas Technical University
Citation: For basic studies of amorphous carbon with applications in microelectronics.


Ginley, David [2011]
National Renewable Energy Laboratory
Citation: For sustained scientific contributions in the broad area of solar energy conversion devices and services to the physics community, including chairing and organizing a series of focus sessions on energy related topics and giving invited talks and active participation in outreach to young physicists.


Gnade, Bruce E [2017]
Southern Methodist University
Citation: For contributions to the development of electronic materials and device technologies that span microelectronics, display technologies, and large area sensors.


Goldman, Rachel [2012]
University of Michigan, Ann Arbor
Citation: For contributions to the fundamental understanding of strain relaxation, alloy formation, and diffusion, and their applications to nanostructure processing


Goodson, Kenneth E. [2014]
Stanford University
Citation: For contributions to the understanding of phonon and electron conduction in solid films, nanostructures, and in semiconductor nanoelectronics.


Gordon, Joseph Grover, II [2000]
IBM Almaden Research Center
Citation: For his pioneering contributions to the study of electrified interfaces through the development and application of techniques for in-situ vibrational spectroscopy and structural characterization.


Gordon, Michael S. [2016]
IBM Thomas J. Watson Research Center
Citation: For excellence in the application of concepts from nuclear physics in lithography, soft-error physics, metrology, and materials characterization.


Goyal, Amit [2008]
Oak Ridge National Laboratory
Citation: For leadership and pioneering contributions to the invention, research, and development of high-performance, high temperature superconducting (HTS) wires, culminating in over 50 issued patents and the subsequent technology transfer to the industry.


Grant, Paul Michael [1997]
Electric Power Research Institute
Citation: For contributions to the fields of organic conductors and high temperature superconductivity.


Greenbaum, Steven [2010]
CUNY - Hunter College
Citation: For pioneering advances in NMR spectroscopy applied to transport measurements leading to improved molecular level understanding of function and failure mechanisms in lithium ion batteries and fuel cells and innovative and sustained enhancement of participation in physics by under represented groups.


Grein, Christoph [2012]
University of Illinois, Urbana-Champaign
Citation: For achievements in novel superlattice-based infrared detectors and emitters


Guha, Supratik [2009]
IBM T.J. Watson Research Center
Citation: For his leadership in semiconductor materials and devices and, in particular, for providing the scientific and technological underpinnings of the high dielectric constant gate stack scheduled to replace the venerable silicon dioxide gate film in field effect transistor products in IBM.


Guo, Chunlei [2012]
University of Rochester
Citation: For pioneering contributions in laser-matter interactions and applications, including the discoveries of the black and colored metals and exploring their wide range of applications


Gutierrez, Carlos J [2017]
Sandia National Laboratories
Citation: For contributions to the understanding of magnetic thin film physics, the development of innovative materials physics education programs, and for research and development leadership in transitioning fundamental materials understanding into a broad range of energy and other national security applications.


Hallen, Hans [2015]
North Carolina State University
Citation: For creative contributions to our understanding of the optical properties of materials at the nanoscale, and their use in the characterization of materials and structures.


Hannon, James [2010]
IBM T.J. Watson Research Center
Citation: For seminal studies of surface and interface structure and properties using Low Energy Electron Microscopy.


Hardy, Christopher J. [2002]
GE Corporate Research and Development, New York
Citation: For contributions to the science and technology of magnetic resonance imaging, particularly methods for the noninvasive visualization of cardiac anatomy, function, and metabolism, and for the MRI selective pulse design.


Harris, James Stewart, Jr. [1992]
Stanford University
Citation: For pioneering contributions to heterojunction device physics and materials preparation techniques that have produced new electronic devices.


Harris, Richard [2008]
National Institute of Standards and Technology
Citation: For creating remarkable and practical measurements and standards based on superconducting integrated circuits through technical leadership and personal contributions.


Harutyunyan, Avetik R. [2014]
Honda Research Instittute
Citation: For major advances in nanomaterials synthesis and analysis, including seminal contributions to the selective growth and industrial use of carbon nanotubes.


Hass, Kenneth Charles [2004]
Ford Motor Company
Citation: For significant applications of atomic-level modeling to technological materials and outstanding leadership in the promotion of industrially-relevant research and education.


Hayes, Robert [2011]
Washington TRU Solutions, LLC
Citation: For furthering the use of nuclear technology in the areas of radiation safety, nuclear engineering and nuclear waste disposal through the use of physical science.


Hays, Dan A. [1998]
Xerox Corporation
Citation: For original contributions to the physics of Xerography.


Hengehold, Robert [2008]
Air Force Institute of Technology
Citation: For pioneering contributions to semiconductor material characterization, over 30 years of distinguished and dedicated leadership in the development of graduate applied physics programs for military officers, and service to the physics community through APS sectional meetings specifically on applied and industrial physics.


Hollenhorst, James [2007]
Agilent Labs
Citation: For outstanding contributions to measurement science and low noise electronics and for leadership of physical science based research and development in support of electronics and life science businesses.


Hong, Minghwei [2011]
National Taiwan University
Citation: For pioneering in III-V semiconductor metal oxide semiconductor field effect transistors including the landmark discovery of high dielectric constant oxide films on GaAs surface with low interface states and unpinned Fermi level, and the first demonstration of inversion-channel GaAs MOSFET, timely for science and technology beyond Si CMOS.


Hu, Qing [2006]
Massachusetts Institute of Technology
Citation: For contributions to the development of long-wavelength terahertz quantum-cascade lasers and real-time terahertz imaging.


Huang, Danhong [2011]
Air Force Research Laboratory - Kirtland AFB
Citation: Significant contributions to our understanding of optical absorption and electron transport properties of quantum devices.


Huff, Howard Richard [2004]
International SEMATECH
Citation: For contributions to silicon materials science, and its application to enhanced integrated-circuit performance, yield and reliability.


Huffman, Gerald P. [2006]
University of Kentucky
Citation: For wide-ranging and significant contributions to the field of fossil energy research.


Hull, Robert [2002]
University of Virginia
Citation: For the development of pioneering in-situ electron microscopy techniques for elucidating dislocation physics in semiconductors and in strained layer epitaxial systems.


Hunt, Jeffrey [2007]
Boeing Info Spc & Def Sys
Citation: For significant contributions in nonlinear surface spectroscopy, and ground-breaking applications of laser physics in the aerospace industry.


Hussain, Muhammad M. [2016]
King Abdullah University of Science & Technology
Citation: For contributions to exploration, evaluation, and transition of planar and nonplanar high-k/metal gate complementary metal oxide semiconductor electronics, silicon/silicon-germanium/III-V nanotube devices, and flexible, stretchable, reconfigurable complementary metal–oxide–semiconductor electronic systems.


Iannaccone, Giuseppe [2015]
Pisa University
Citation: For contributions to the theory of quantum transport and noise in mesoscopic and nanoelectronic devices and to their application in electronics.


Iqbal, Zafar [1996]
Allied Signal, Inc.
Citation: For outstanding contributions to the design, synthesis, understanding, and application of non-conventional electronic, optical, and energetic materials - from porous silicon to polydiacetylenes, high temperature superconductors, and explosives.


Isaac, Randall Duane [1997]
IBM T.J. Watson Research Center
Citation: For outstanding contributions to advanced bipolar technology and the 64Mb DRAM development.


Iyer, Subramanian [2016]
University of California - Los Angeles
Citation: For the commercialization of semiconductor and packaging technology products.


Jackel, Lawrence David [1997]
AT&T Bell Labs
Citation: For sustained contributions to the fields of microscience and machine learning by increasing scientific understanding and by developing technology and applying it to systems with commercial and industrial significance.


Jagadish, Chennupati [2003]
Australian National University
Citation: For contributions to compound semiconductor growth, processing and optoelectronic devices.


Jain, Ravinder K. [2008]
University of New Mexico
Citation: For pioneering contributions in several areas of applied physics, including discovery of plasmon-mediated light-emission from tunnel junctions, seminal studies of nonlinear optics in semiconductors and optical fibers, and the invention of several important ultrashort pulse lasers and fiber lasers.


Jones, Robert Edwin [2003]
Motorola, Inc
Citation: For development of new materials technologies for integrated circuits and high-permittivity DRAMs.


Karunasiri, Gamani [2015]
Naval Postgraduate School
Citation: For extensive contributions to the development of quantum well infrared detectors and MEMS based sensors for directional sound sensing and THz imaging.


Kasap, Safa [2007]
University of Saskatchewan
Citation: For contributions to the science and technology of amorphous semiconductors and devices; in particular, for advances in x-ray photoconductors used in direct conversion flat panel x-ray image detectors.


Kaufman, James H. [2002]
IBM Almaden Research Center
Citation: For his invention of nitrogenated diamond-like carbon that has become a standard protective overcoat in the disk storage industry.


Kaviany, Massoud [2011]
University of Michigan, Ann Arbor
Citation: For seminal contributions to the understanding of phonon physics and thermal transport in fluids and solids; and for pioneering developments in the semiclassical simulation of electronic and phonon transport.


Kherani, Nazir P. [2018]
University of Toronto
Citation: For distinct contributions to the development of betavoltaic, photovoltaic, and nanoplasmonic devices for long-lived batteries, high efficiency Si heterojunction solar cells, graded gratings for high sensitivity bio/chem-sensing applications, and contributions to understanding the Staebler- Wronski effect.


Khosla, Rajinder P. [1998]
National Science Foundation
Citation: In recognition of exemplary leadership in developing innovative and creative applications of microelectronics in imaging technology.


Khurgin, Jacob [2011]
Johns Hopkins University
Citation: For diverse contributions to understanding the underlying physics and improving the performance of numerous electronic and optical devices, such as semiconductor second-order nonlinear optical generators, intersubband semiconductor lasers and Raman oscillators, slow light, and plasmonic devices.


Kim, Ki [2015]
North Carolina State University
Citation: For contributions to the understanding of electron-phonon scattering and related transport properties in the low-dimensional electronic and spintronic devices and structures.


King, William P. [2014]
University of Illinois, Urbana-Champaign
Citation: For distinguished contributions to the applied physics of nanometer-scale thermal and mechanical property measurements, and the translation of this work to numerous applications in materials science and nanotechnology.


Kingsley, Jack Dean [1996]
General Electric Corporate R&D (retired)
Citation: For sustained excellence in the science and technology of lasers, lighting, television, displays and medical diagnostic imaging equipment.


Kirkpatrick, Douglas A. [2014]
InnerProduct Partners
Citation: In recognition of his pioneering, and ingenious contributions to the conception, development, maturation and commercialization of novel technologies on bio-fuels, high efficiency solid state lightning, and bio-molecular tubular nano-structures and his visionary management of technology programs with major National security implications.


Klimeck, Gerhard [2011]
Purdue University
Citation: For the development, application, and dissemination of atomistic, quantum simulation tools for nanoelectronic devices.


Klimov, Victor I. [2003]
Los Alamos National Laboratory
Citation: For the development of nanocrystal quantum dot lasers.


Kneipp, Katrin [2004]
Wellman Center for Photomedicine & Biophotonics
Citation: For contributions to the application of Raman scattering in nanotechnology and the biomedical field.


Korotky, Steven K. [2013]
Alcatel Lucent, Bell Laboratories
Citation: For sustained contributions to the advancement of optical fiber communications, particularly the use of lithium niobate technology for high speed modulators.


Kryder, Mark Howard [2002]
Seagate Technology LLC, Pennsylvania
Citation: For outstanding contributions to the understanding of magnetic domain behavior, and leadership in the technologies of information storage.


Lakhtakia, Akhlesh [2012]
Pennsylvania State University
Citation: For conceptualization of sculptured thin films; wide-ranging theoretical and experimental research in optics on these materials; design, fabrication, and characterization of optical devices for circular polarization; and significant extensions to biomedical, biomimetic, and forensic arenas


Lambert, Steven [2016]
American Physical Society
Citation: For developing innovations in hard disk drive heads and disks which helped sustain the dramatic increases in capacity delivered by the magnetic recording industry.


Larkin, Michael I. [2014]
Wyatt Technology
Citation: For his insight, innovative skills, and abilities to transfer physical concepts and laws into the creation of viable analytical instrumentation widely used by both industrial and academic communities.


Lee, El-Hang [2005]
Inha University
Citation: For contributions to optical and semiconductor physics and applications in electronic, optoelectronic, photonic and optical communication technologies.


Levine, Zachary Howard [2001]
National Institute of Standards and Technology
Citation: For leadership in demonstrating x-ray tomography of integrated circuit interconnects with submicron resolution.


Liddle, James [2012]
National Institute of Standards and Technology
Citation: For contributions to the science and technology of nanofabrication and nanolithography, including projection electron beam lithography, high-resolution x-ray optics, diblock copolymer and chemically amplified resists, and the directed assembly and metrology of nanoparticle structures


Lin, Shawn-Yu [2002]
Sandia National Laboratories
Citation: For pioneering contributions to the development of two- and three-dimensional photonic crystals for 1.55 micron optical communication applications.


Liu, Hui Chun [2004]
Institute of Microstructural Sciences
Citation: For contributions to the understanding of resonant tunneling and intersubband transitions in semiconductor heterostructures and quantum devices.


Lu, Chih-Yuan [2004]
Macronix International Co., Ltd
Citation: For contributions to the science and technology of semiconductor integrated-circuit technology.


Luborsky, Fred Everett [1991]
Affiliation not available
Citation: For contributions to magnetic materials research to promote our understanding of permanent magnet behavior, computer memories, and amorphous materials, particularly for transformers and high temperature superconductors for power applications.


Lundstrom, Mark Steven [2000]
Purdue University
Citation: For insights into the physics of carrier transport in small semiconductor devices and the development of simple, conceptual models for nanoscale transistors.


Léonard, François [2016]
Sandia National Laboratories
Citation: For fundamental studies of the physics of nanoscale electronic devices.


Ma, Zhenqiang [2017]
University of Wisconsin – Madison
Citation: For seminal contribution to the development of flexible high speed devices, microwave device technology, optoelectronics, and the innovation in the area of biodegradable environmentally benign devices.


Mantese, Joseph V. [2014]
United Tech Research Center
Citation: For contributions in applied physics related to the formulation, understanding, and application of novel electronic materials in fundamentally new devices and structures.


Manzur, Tariq [2015]
Naval Underwater System Center
Citation: For outstanding contributions in the field of photonics, laser devices, and systems.


Marchetti, Alfred Paul [1999]
Eastman Kodak Company
Citation: For creative and highly significant research on low-temperature photophysics of silver halide crystals; elucidating interactions among photoelectrons, holes, excitons, phonons, dopants, photographically important adsorbates, lattice defects, and surfaces.


Marinero, Ernesto E. [2014]
Purdue University
Citation: For his seminal contributions to the development of materials for recording and sensor devices enabling continuous density increases of information storage technology, in particular of magnetic recording.


Mate, Charles Mathew [1998]
IBM Almaden Research Center
Citation: For his pioneering contributions establishing the field of nanoscale tribology, producing widespread impact on technology, particularly on lubrication in disk drives.


Maurer, Robert D. [1996]
Affiliation not available
Citation: For fundamental studies of the optical properties of glass that led to the fabrication of the first low-loss optical fibers, now used worldwide for long distance telecommunication.


McKee, Rodney A [2003]
Oak Ridge National Laboratory
Citation: For heteroepitaxy of crystalline oxides on semiconductors.


Meinhart, Carl [2011]
University of California, Santa Barbara
Citation: For contributions to the seminal developments of micron resolution particle image velocimetry and free-surface microfluidics for surface enhanced Raman scattering technology, and for providing deeper understanding of the flow of fluids over surfaces in the extremes of microscopic slip and high Reynolds number turbulence.


Meisner, Gregory P. [2003]
General Motors R&D Center
Citation: For advances in filled skutterudite thermoelectric materials having high energy conversion efficiency.


Meitzler, Thomas [2015]
US Army Research Devevelpment & Engineering Command
Citation: For the development of a novel technique for embedding of ultrasonic, optical, and spintronic transducers-sensors into armor materials and contributions to understanding how embedded transducers give indication of armor damage.


Meyer, Jerry Richard [2001]
Naval Research Laboratory
Citation: For fundamental and applied contributions to the physics of semiconductor optical and electronic processes and devices, including new classes of midwave-infrared quantum well lasers.


Meyerson, Bernard S. [1998]
IBM T.J. Watson Research Center
Citation: For the invention of ultra-high vacuum chemical vapor deposition and its application to low temperature silicon epitaxy, especially the fabrication of SiGe heterojunction bipolar integrated circuits for wireless telecommunications.


Migliori, Albert [1999]
Los Alamos National Laboratory
Citation: For the development of resonant ultrasound spectroscopy and its application in materials physics and technology.


Mitchel, William Charles [1999]
Air Force Research Laboratory
Citation: In recognition of significant research in the study of defects in gallium arsenide, silicon carbide and other semiconductors.


Mitin, Vladimir [2011]
State University of New York, Buffalo
Citation: For contributions to phonon enhancement of sensors and detectors and to controlled carrier kinetics in sensors with high responsivity.


Mohammad, Noor [2007]
Unknown
Citation: For sustained contribution to the development of nanowire technology and ohmic contacts to semiconductors.


Monroe, Donald Paul [2001]
Agere Systems
Citation: For contributions to understanding of physical mechanisms underlying electronic device performance and reliability.


Morelli, Donald T. [2004]
Delphi Corporation Research Labs
Citation: For contributions to the understanding of heat transport in semi-metals and wide band-gap semiconductors, and pioneering studies of novel thermoelectric materials.


Munro, William [2012]
NTT Basic Research Labs
Citation: For extensive contributions to applied quantum information. He proposed a scheme for quantum multiplexing in a quantum network and weak optical nonlinearities for optical quantum computing. He was the theoretician on the team that first demonstrated coupling of a superconducting flux-qubit to NV diamond spins


Murray, Conal [2018]
IBM Thomas J. Watson Research Center
Citation: For wide-ranging contributions including the development of analytical methods to understand decoherence for superconducting qubits, and for measurement and modeling of strain in advanced microelectronics.


Narayanan, Vijay [2011]
IBM T.J. Watson Research Center
Citation: For seminal contributions to the science and technology of high dielectric constant oxide materials and metal gate based transistors that have redefined silicon microelectronics.


Neugebauere, Constantine A. [1991]
Affiliation not available
Citation: For elucidating the properties of ferromagnetic films, and the electrical resistivity of metallic films at the extreme lower limits of their thickness, and for first proposing the thin film multichip module interconnect approach for IC's as a more viable alternative to wafer scale integration.


Newman, Nathan [2006]
Arizona State University
Citation: For contributions to the understanding of Schottky barriers in semiconductor devices, and to the synthesis of novel materials for superconducting devices.


Nikzad, Shouleh [2012]
Jet Propulsion Laboratory
Citation: For innovative development of band structure engineering techniques using delta-doping at semiconductor surfaces and their application to produce unprecedented performance in sensors and devices


Ning, Tak Hung [1997]
IBM T.J. Watson Research Center
Citation: For outstanding contributions to the understanding of hot electron effects in MOSFET devices and advances in bipolar technology.


Nolas, George S. [2013]
University of South Florida
Citation: For pioneering studies of novel thermoelectric materials, especially cage-like compounds with low thermal conductivity.


Norskov, Jens K [2003]
Technical University of Denmark
Citation: For contributions in theoretical surface physics and heterogeneous catalysis.


Noyan, Ismail Cevdet [2003]
IBM T.J. Watson Research Center
Citation: For analysis of displacement and stress fields in crystalline solids at various length scales.


Oden, Patrick I [2017]
Texas Instruments
Citation: For contributions to the commercial success of digital micromirror micro-electro-mechanical systems-based displays through co-invention of a highly flexible and scalable pixel architecture based on a new understanding of mirror dynamics, shape, and force interactions via novel integration of metrology techniques.


Olmstead, Marjorie Ann [2002]
University of Washington
Citation: For innovative studies of interface formation between dissimilar materials, especially the competition between thermodynamic and kinetic constraints in controlling morphologies and properties of heterostructures.


Ourmazd, Abbas [1997]
Institute for Semiconductor Physics
Citation: For work on the characterization of semiconductor interfaces, the development of fast transistors, and service to the APS via his role in founding the Forum on Industrial and Applied Physics.


Owens, Frank James [1999]
Army Armament Research & Development
Citation: For developing EPR as a tool to study phase transitions in solids, for developing methods to predict the stability of energetic materials and work on magnetic field induced electromagnetic absorption in superconductors.


Palmstrom, Christopher J. [2001]
University of Minnesota
Citation: For his original work on metallic compound/compound semiconductor heterostructures and thin film interfacial analysis.


Panarella, Emilio [1999]
Advanced Laser and Fusion Tech., Inc.
Citation: For pioneering theoretical and experimental contributions to the two-stage spherical pinch and its commercialization as an industrial pulsed X-ray source.


Paranthaman, M. Parans [2018]
Oak Ridge National Laboratory
Citation: For distinguished contributions to the field of materials synthesis and characterization for high temperature superconductors, solar cells, lithium ion batteries, and additive manufacturing of magnetic materials.


Partin, Dale Lee [1991]
Delphi Electric and Safety
Citation: For contributions to tunable lead-rare earth-chalcogenide diode lasers.


Pearsall, Thomas Perine [1996]
University of Washington
Citation: For seminal contributions to the InGaAsP alloy system, a material used in the emitter and detector components of optical fibre communication links.


Pearton, Stephen John [2005]
University of Florida
Citation: For development of advanced semiconductor processing techniques and understanding of the role of defects and impurities on compound semiconductor devices.


Perebeinos, Vasili V. [2013]
IBM T.J. Watson Research Center
Citation: For pioneering contributions to the theory of optical and transport properties of carbon nanotubes and graphene.


Perera, Unil A. G. [2005]
Georgia State University
Citation: For contributions to the science and technology of homo and heterojunction quantum structures, especially infrared and terahertz sensors and artificial neurons.


Pernisz, Udo [2008]
Dow Corning Corporation
Citation: For his contributions to making siloxane resins a commercial success as spin-on dielectrics in the IC industry, and his investigations of the luminescence of Si-containing organic and inorganic compounds that led to the development of novel materials for photonics applications.


Pinkerton, Frederick E. [1996]
General Motors R&D Center
Citation: For his research on the physics of rare earth-transition metal materials and his contributions to the establishment of a commercial permanent magnet technology.


Pique, Alberto [2014]
Naval Research Laboratory
Citation: For achievements in laser materials processing and developing the laser-induced forward transfer of nanoparticle inks and complex suspensions for the direct-write of functional materials for applications in micro-power sources, chem/bio sensors and printed electronics.


Ponce, Fernando A. [2002]
Arizona State University
Citation: For novel applications of electron microscopy for measurement of semiconductor interface atomic arrangement and the effect of atomic structures on the electronic and optoelectronic properties of materials.


Possin, George Edward [1998]
General Electric Corp. R & D
Citation: For sustained excellence in the science and technology of medical X-ray imaging equipment, flat panel displays, and semiconductor physics.


Proctor, Ivan David [1998]
Lawrence Livermore National Laboratory
Citation: For producing accuracy, capacity and capability improvements in accelerator mass spectrometry that have contributed to archaeology, the earth sciences, the biological sciences and arms control.


Quate, Calvin F. [1996]
Stanford University
Citation: For his co-creation of atomic force microscopy, his inventive developments of applications of scanning probe microscopies, and his critical role in bringing the technologies to industrial and academic use.


Raoux, Simon [2013]
IBM T.J. Watson Research Center
Citation: For seminal contributions to the science and technology of phase change materials and phase change random access memory technology that opened up a whole new field of memory technology.


Redington, Roland Wells [1991]
Affiliation not available
Citation: For leading the team that pioneered the 5-second fan beam computed tomography scanner. He repeated this success with NMR imaging where his group demonstrated imaging and spectroscopy at 1.5 tesla.


Register, Leonard F. [2013]
University of Texas
Citation: For contributions to semiconductor device theory, modeling and design.


Reine, Marion B. [1996]
Lockheed Martin IR Imag Lockheed Martin
Citation: For technical leadership in the design and development of innovative photoconductive and photovoltaic HgCdTe devices for advanced infrared detectors.


Ren, Fan [2008]
University of Florida
Citation: For contributions to the development of device processing technologies for compound semiconductor devices based on GaAs, InP, ZnO and GaN.


Rimai, Donald S. [1998]
Eastman Kodak Company
Citation: For his contributions in the fields of particle adhesion and electrophotography.


Rogers, John A. [2006]
University of Illinois, Urbana-Champaign
Citation: For contributions to the fields of flexible electronics, optical fiber devices, nanolithography and picosecond ultrasonics.


Ross, Frances Mary [2001]
IBM T.J. Watson Research Center
Citation: For her pioneering contributions to in-situ studies of materials processes in the electron microscope.


Rothberg, Lewis Josiah [1996]
AT&T Bell Laboratories
Citation: For pioneering work furthering applications and manufacturing approaches of organic electronics through fundamental understanding of organic photophysics and transport.


Rumble, John [2015]
R&R Data Services
Citation: For leadership in developing systems that organize and provide ready access to the high quality scientific and technical data needed for the design, performance prediction, and analysis of industrial products.


Ryzhii, Victor [2004]
The University of Aizu
Citation: For contributions to the physics of quantum electronic devices.


Sai-Halasz, George Anthony [1998]
IBM T.J. Watson Research Center
Citation: For his applications of physics in seminal contributions to microelectronics.


Schein, Lawrence B. [2006]
Retired
Citation: For contributions to electrophotography, electrostatics and transport in organic solids.


Schiff, Eric [2011]
Syracuse University
Citation: For pioneering applied physics research on thin film silicon photovoltaic materials and devices.


Schmidt, Robert Max [1996]
Boeing Defense & Space Group
Citation: For seminal research that demonstrated the dominant influence of gravity on cratering phenomena and applications to impact cratering of planets and to missile basing: and for spacecraft protection simulation techniques.


Schuber, Mathias [2011]
University of Nebraska-Lincoln
Citation: For the development of generalized ellipsometry and the invention of the Optical Hall Effect, and their transformative potential for industrial characterization of materials properties, for example in liquid crystal displays and semiconductor device structures.


Schubert, E. Fred [2001]
Boston University
Citation: For pioneering contributions to the doping of semiconductors including delta doping, doping of compositionally graded structures resulting in the elimination of band discontinuities, and superlattice doping to enhance acceptor activation.


Schulman, Joel Nathan [2005]
HRL Laboratories
Citation: For seminal contributions to the understanding of the electronic and optical properties of semiconductor heterostructures, ranging from the physics of band mixing in superlattices to devices for millimeter wave imaging.


Schwall, Robert Edward [2004]
National Institute of Standards and Technology
Citation: For contributions to superconducting materials and applied superconductivity.


Scranton, Robert A. [2000]
IBM Almaden Research Center
Citation: For leadership in the development and commercialization of the magnetoresistive effect and the giant magnetoresistive effect in hard disk drives, enabling unprecedented advances in the density of magnetic data storage.


Seebauer, Edmund [2007]
University of Illinois, Urbana-Champaign
Citation: For the discovery of a new suite of physical mechanisms for controlling the behavior of point defects in semiconductors using surfaces, photostimulation and ions, with applications in transistor manufacture for integrated circuits.


Shenai, Krishna [2010]
University of Toledo
Citation: For pioneering contributions to the physics, technology and application of semiconductor metallization.


Shinn, Michelle [2012]
Thomas Jefferson National Accelerator Facility
Citation: For contributions in the applications of lasers in society, particularly the development of high power optics technologies for rare earth solid state lasers and free-electron lasers


Singh, Rajiv [2010]
University of Florida
Citation: For distinguished scientific, technological and entrepreneurial contributions in laser-solid interactions, and processing of semiconductor surfaces and interfaces.


Sivananthan, Sivalingam [2010]
University of Illinois, Chicago
Citation: For seminal contributions to the growth technology of II-VI photovoltaic materials.


Slafer, Dennis [2013]
MicroContinuum, Inc
Citation: For pioneering the development of nano-imprint technology and related roll-to-roll processes for use in optical and opto-electronic devices.


Solomon, Paul M. [1999]
IBM T.J. Watson Research Center
Citation: For work on the limits of small semiconductor devices.


Specht, Eliot [2012]
Oak Ridge National Laboratory
Citation: For crystallographic studies of the effects of microstructural defects on materials properties, including advancing the understanding of the effects of crystallographic alignment on current transport in high-temperature superconductors


Speck, James S. [2009]
University of California, Santa Barbara
Citation: For seminal studies of strain relaxation in epitaxial films, for the development of molecular beam epitaxial growth of GaN and nonpolar orientations of nitride semiconductors, and for leadership in applications of wide-band-gap semiconductors to solid-state lighting.


Spitzer, Mark [2012]
MicroOptical Corp
Citation: For seminal research on industrially important opto-electronic devices, including photovoltaic devices, micro-display devices and eyeware display devices


Spry, Robert James [2000]
Air Force Research Laboratory
Citation: For important contributions to semiconductor defect spectroscopy, analysis of nonlinear optical devices, and polymer conductivity and optical properties.


Stalder, Kenneth [2011]
Stalder Tech & Reserch
Citation: In recognition of his application of atomic, molecular and plasma physics in the industrial and commercial sector and of his pioneering work in the area of plasmas created in liquids.


Stanton, Christopher J [2003]
University of Florida
Citation: For theoretical contributions to nonequilibrium phenomena in semiconductors and applications to ultrafast laser spectroscopy.


Stathis, James Henry [2005]
IBM T.J. Watson Research Center
Citation: For significant contributions to the physical understanding of silicon dioxide reliability in MOSFET technology.


Steiner, Mathias B. [2016]
IBM Research Laboratory
Citation: For outstanding contributions to industrial and applied physics, especially in the development of novel methods for the experimental investigation and technological application of nanometer scale materials.


Suhir, Ephraim [2002]
Iolon, Inc., California
Citation: For distinguished contributions to the field of analytical modeling of the physical behavior and reliability of microelectronic and photonic materials and systems.


Sun, Handong [2016]
Nanyang Technological University
Citation: For outstanding contributions to optoelectronics with novel characterization and deep understanding of photonic materials and structures, leading to practical high-performance devices.


Sutherland, Richard L. [1997]
Science Applications International Corp
Citation: For his contributions to the understanding and application of non-linear optical materials and switchable volumetric holograms.


Svensson, Bengt G. [2014]
University of Oslo
Citation: For pioneering and sustained contributions to ion-solid interactions and defects, doping and diffusion in Si, SiGe, SiC and oxide semiconductors.


Swift, Gregory William [1997]
Los Alamos National Laboratory
Citation: For pivotal experiments leading to a new understanding of the superfluid state and for the development of thermoacoustic engines.


Szmulowicz, Frank [2006]
University of Dayton Research Institute
Citation: For contributions to the design and understanding of semiconductor materials for infrared detector applications.


Takeuchi, Ichiro [2010]
University of Maryland
Citation: For pioneering contributions to the creation of novel classes of materials using combinatorial synthesis and probing their properties using novel probes.


Talin, Albert A [2017]
Sandia National Laboratories
Citation: For the discovery of new electronic transport phenomena, materials, and devices.


Tamor, Michael Alan [2000]
Ford Motor Company
Citation: For the application of physics in the automotive industry, in particular development of diamond-like hard coatings and hybrid electric vehicle energy management simulation tools.


Tang, Ching W. [1998]
Eastman Kodak Company
Citation: For his pioneering work in organic light emitting diodes.


Tang, Xinfeng [2015]
Wuhan University of Technology
Citation: For pioneering studies of the synthesis, processing, characterization, and understanding of thermoelectric materials, and for contributions to their use in industrial applications.


Tanielian, Minas [2012]
Boeing Company
Citation: For ground breaking advancements in the application of condensed matter physics to electronics communications in the aerospace industry, as well as nanotechnology research with global significance


Tao, NJ [2010]
Arizona State University
Citation: For pioneering and innovative contribution to the science and technology of molecular and nanoelectronics, electrochemical based nanofabrications, and chemical sensors.


Terris, Bruce David [2001]
IBM Almaden Research Center
Citation: For the exploration of novel approaches to high density data storage.


Thomas, Luc [2012]
IBM Almaden Research Center
Citation: For significant contributions to the fundamental understanding and applications of the current and field induced dynamics of magnetic domain walls


Tibbetts, Gary George [1998]
General Motors R & D Center
Citation: For his pioneering research which led to the discovery of vapor-phase growth of carbon fibers from natural gas and for his subsequent significant researches on the properties and applications of these fibers.


Tiwari, Sandip [1998]
IBM T.J. Watson Research Center
Citation: For contributions to understanding of device physics and for innovations in small electronics and optical devices with strong quantum confinement.


Todd, Alan [2007]
Advance Energy Systems
Citation: For his leadership and contributions to the development and Industrial production of high-average-current particle accelerator components and for advances in the understanding of plasma MHD stability.


Towe, Elias [2003]
Carnegie Mellon University
Citation: For contributions to the design and application of quantum-dot nanostructures in optoelectronic devices.


Trainoff, Steven P. [2009]
Wyatt Tech Corp
Citation: For exceptional contributions to the development of analytical instrumentation whose worldwide use will continue to play a major role in the health and well-being of us all.


Tritt, Terry [2011]
Clemson University
Citation: For his career-long contributions to the science and engineering of thermoelectric materials, the industrial application of that knowledge, and for the education and promotion of numerous young scientists and engineers.


Trudeau, Michel [2007]
Inst de Recherche d'Hydro
Citation: For his sustained and highly original contributions to the synthesis of metastable and nanostructural materials and the study of their physical properties, with the emphasis in their uses for improved energy efficiency related applications.


Tsai, Din Ping [2007]
National Taiwan University
Citation: For his contributions in nanophotonics, plasmonics and near-field optics especially on near-field scaning optical microscopy, nano storage and nano imaging.


Tsybeskov, Leonid [2002]
New Jersey Institute of Technology
Citation: For the discovery of a method to stabilize porous silicon and for innovative contributions to the development and studies of silicon-based, self-organized nanostructures.


Turkevich, Leonid A. [2013]
NIOSH - The National Institute for Occupational Safety and Health
Citation: For seminal contributions in condensed matter phase behavior, complex fluids (colloidal aggregation, microemulsions) and finely divided matter (aerosols, dust); and for utilizing those physical insights to solve complex problems in petroleum extraction and in occupational safety and health (air filtration, inhalation hazards).


van Dover, Robert Bruce [1999]
Bell Laboratories
Citation: For contributions to the understanding of magnetic materials and superconductors, particularly high-temperature superconductors.


Vandenberg, Joka M. [2009]
Alcatel Lucent, Bell Laboratories
Citation: For the invention of a method to use x-ray crystallography for nano-scale feed-back control of the growth of multi-quantum-well, ternary-semiconductor lasers that then enabled optical communications for world-wide internet, voice and data systems, and for a distinguished career of contributions to understanding the structure of new materials.


Vinegar, Harold J. [1999]
Shell Development Company
Citation: For contributions to the science and technology of oil exploration and environmental remediation, particularly thermal methods for extracting hydrocarbons from the ground and for applications of NMR methods to well logging.


Vurgaftman, Igor [2010]
Naval Research Laboratory
Citation: For introducing and developing novel optoelectronic device concepts based on the principles of physics, and for significant contributions to the physical understanding, design, and simulation of semiconductor devices such as the interband cascade laser and the type-II infrared photodiode.


Wang, Xun-Li [2010]
Oak Ridge National Laboratory
Citation: For sustained contribution in neutron diffraction studies of structure, phase transformations, and mechanical behavior in materials and engineering systems and leadership in the design and construction of a versatile engineering diffractometer at the Spallation Neutron Source.


Watkins, Simon [2008]
Simon Fraser University
Citation: For groundbreaking research on the growth and properties of high quality narrow-gap semiconductor heterostructures by organometallic vapor phase epitaxy (OMVPE) and their application to high-speed semiconductor devices.


Weiler, Margaret Horton [1998]
Lockheed Martin
Citation: For fundamental contributions to HgCdTe infrared detector and GaAs microwave device technologies, in the development and experimental validation of new physical models for semiconductor device properties and their influence on system applications.


Weller, Robert A. [2011]
Vanderbilt University
Citation: For contributions to the understanding of the interactions of radiation with microelectronic materials and devices.


Whelan, David [2008]
Boeing Company
Citation: For over 25 years of innovation and research conducted in academic, national laboratory and industrial research environments, development of the B2 design and instrumentation, air to air synthetic aperture radar, multi-spectral radar imaging, and visionary technical leadership at both DARPA and The Boeing Company.


Wiff, Donald Ray [1999]
Kent State University
Citation: For research in solving mathematically ill-posed problems in polymer molecular weight and mechanical relaxation time distribution functions, and in developing molecular, insitu molecular and nanocomposite polymer concepts for high performance materials and micoelectromechanical system devices.


Willander, Magnus [2011]
Linkoping University, Norrkoping
Citation: Pioneering work on realization of polymer and silicon-germanium transistors and silicon carbide. Significant contributions on modeling solid and soft nanostructures, and experimental works on nanostructures, particularly zinc oxide nanostructures.


Williams, Clayton [2008]
University of Utah
Citation: For his pioneering and sustained contributions to the field of Scanning Capacitance Microscopy and to the development of the Scanning Capacitance Microscope for both quantitative two-dimensional carrier and dopant profiling, and for the characterization and failure analysis of semiconductor materials and devices (including VLSI products) on a nanometer scale.


Williams, James Stanislaus [2006]
Australian National University
Citation: For contributions to the understanding and application of ion-solid interactions in semiconductors, especially defect evolution and crystallization of amorphous layers.


Winokur, Peter Stanley [2000]
Sandia National Laboratories
Citation: For contributions to the understanding of physical mechanisms governing the response of CMOS devices to ionizing radiation and to the development of radiation-hardened Si gate CMOS technology.


Witt, Gerald Lee [2002]
Air Force Office of Scientific Research
Citation: For exemplary leadership of national interdisciplinary research efforts in the fields of quantum-effect devices, low-temperature GaAs, optoelectronic measurement techniques, radiation effects, and defects in wide bandgap semiconductors.


Wright, Michael [2015]
Varian Medical Systems
Citation: For outstanding research and innovation in x-ray imaging and radiation therapy, its resulting commercial impact, and profound medical benefits for humankind.


Xu, Jingming [2010]
Brown University
Citation: For contributions to advances in industrial optoelectronics, sensor materials and bionanoelectronic.


Yang, Jihui [2012]
University of Washington
Citation: For pioneering studies of the design, synthesis and characterization of novel thermoelectric materials, and for leadership in their use in devices and systems for waste heat recovery applications


Yang, Ping [2018]
Texas A&M University
Citation: For sustained pioneering research in light scattering and radiative transfer with various applications, especially in remote sensing of the Earth’s atmosphere.


Ye, Peide "Peter" [2016]
Purdue University
Citation: For contributions to scientific understanding and technical development of transistor technology on novel channel materials.


Yeganeh, Mohsen S. [2005]
ExxonMobil Research & Engineering Co
Citation: For outstanding advances in non-linear optical spectroscopy and its development as a tool for the investigation of interfacial phenomena of fundamental and commercial importance.


Zafar, Sufi [2007]
IBM T.J. Watson Research Center
Citation: For her contribution to the understanding of electrical degradation and charge transport mechanisms in high permittivity and SiO2 dielectric thin films, with a focus on advanced CMOS and memory device applications.


Zhang, Wenqing [2014]
Chinese Academy of Sciences
Citation: For pioneering contributions to the understanding of advanced thermoelectric materials and their application in industry based on ab initio calculations, and for developing ab initio thermodynamic tools for metal/ceramic interfaces.


Zhang, Xiang [2008]
University of California, Berkeley
Citation: For the pioneering demonstration of the optical Superlens and Hyperlens for nano-optics; the development of concepts of metamaterials, plasmonic, and far IR magnetism; seminal contributions to the plasmonic lithography.


Zhang, Yong [2017]
University of North Carolina – Charlotte
Citation: For outstanding contributions to the fundamental understanding, characterization, and applications of semiconductor hetero-structures and isoelectronic impurities in semiconductors.


Zhang, Zhuomin [2015]
Georgia Institute of Technology
Citation: For advancing the knowledge of near-field thermal radiation between objects at nanometer distances as well as the radiative properties of photonic crystals and metamaterials for energy harvesting and semiconductor processing.