27th International Conference on the Physics of Semiconductors: Tutorials
Flagstaff, AZ
25-30 July 2004
Tutorial Organizer: Brian J. Skromme, Arizona State University
Tutorial Coordinator: Harland Tompkins, Consultant, Chandler, Arizona
Tutorial Session 1: Epitaxial Growth
Molecular Beam Epitaxy
Klaus Ploog, Paul Drude Institut, Germany
Semiconductor Nanostructures: Fabrication and Properties of Self-Assembled Quantum Dots
Gerhard Abstreiter, Walter Schottky Institute, Technische Universität of München, Germany
CVD Deposition of Group-III Nitride Materials
M. Asif Khan, University of South Carolina
SiGe CVD, Fundamentals and Device Applications
Derek Houghton, Aixtron, Inc.
Tutorial Session 2: Characterization of Semiconductors and Heterostructures
Luminescence and Related Spectroscopies of Semiconductors and Heterostructures
Michael Thewalt, Simon Fraser University, Canada
Spectroscopic Ellipsometry: What It Is, What It Will Do, and What It Won’t Do
Harland Tompkins, Chandler, Arizona
Characterization of Semiconductor Hetero- and Nanostructures by X-ray Scattering
Václav Holý, Charles University, Czech Republic
Transmission Electron Microscopy of Semiconductors and Heterostructures
D. Cherns, University of Bristol, United Kingdom
Tutorial Session 3: Semiconductor Device Physics and Quantum Computing
Physics Challenges Facing the Semiconductor Industry
Alain Diebold, International SEMATECH
SiGe(C) MOSFET Technology
Sanjay Banerjee, University of Texas at Austin
Semiconductor Devices for Quantum Computing
Bruce Kane, University of Maryland
Novel Physics of Nitride Devices
Michael Shur, Rensselaer Polytechnic Institute
Invited Device Physics Talk
Physics of Advanced CMOS VLSI
Dennis Buss, Texas Instruments, Inc.
Note: The resolution of the original presentations has been reduced in order to minimize the file size. If display performance is slow, save the file to your hard drive and view it from there.
25-30 July 2004
Tutorial Organizer: Brian J. Skromme, Arizona State University
Tutorial Coordinator: Harland Tompkins, Consultant, Chandler, Arizona
Tutorial Session 1: Epitaxial Growth
Molecular Beam Epitaxy
Klaus Ploog, Paul Drude Institut, Germany
Semiconductor Nanostructures: Fabrication and Properties of Self-Assembled Quantum Dots
Gerhard Abstreiter, Walter Schottky Institute, Technische Universität of München, Germany
CVD Deposition of Group-III Nitride Materials
M. Asif Khan, University of South Carolina
SiGe CVD, Fundamentals and Device Applications
Derek Houghton, Aixtron, Inc.
Tutorial Session 2: Characterization of Semiconductors and Heterostructures
Luminescence and Related Spectroscopies of Semiconductors and Heterostructures
Michael Thewalt, Simon Fraser University, Canada
Spectroscopic Ellipsometry: What It Is, What It Will Do, and What It Won’t Do
Harland Tompkins, Chandler, Arizona
Characterization of Semiconductor Hetero- and Nanostructures by X-ray Scattering
Václav Holý, Charles University, Czech Republic
Transmission Electron Microscopy of Semiconductors and Heterostructures
D. Cherns, University of Bristol, United Kingdom
Tutorial Session 3: Semiconductor Device Physics and Quantum Computing
Physics Challenges Facing the Semiconductor Industry
Alain Diebold, International SEMATECH
SiGe(C) MOSFET Technology
Sanjay Banerjee, University of Texas at Austin
Semiconductor Devices for Quantum Computing
Bruce Kane, University of Maryland
Novel Physics of Nitride Devices
Michael Shur, Rensselaer Polytechnic Institute
Invited Device Physics Talk
Physics of Advanced CMOS VLSI
Dennis Buss, Texas Instruments, Inc.
Note: The resolution of the original presentations has been reduced in order to minimize the file size. If display performance is slow, save the file to your hard drive and view it from there.
