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The Forum on Industrial and Applied Physics is proud to present a list of members nominated by FIAP and elected to Fellowship in the American Physical Society. Each new fellow is elected after careful and competitive review and recommendation by the FIAP Fellowship Committee, additional review by the APS Fellowship Committee and final approval by the full APS Council.
FIAP Deadline for APS Fellowship Nomination: Friday, June 1, 2012 APS Fellowship InformationAPS Fellows Nominated by FIAP
Atkinson, William [2011]
Boeing Company
Citation: For academic contributions in the areas of nuclear physics and for substantial applications of radiation technology to spaceborne applications in the aerospace community.
Boeing Company
Citation: For academic contributions in the areas of nuclear physics and for substantial applications of radiation technology to spaceborne applications in the aerospace community.
Boykin, Timothy [2011]
University of Alabama, Huntsville
Citation: For contributions to the theory and full-bandstructure modeling of semiconductor nanostructures.
University of Alabama, Huntsville
Citation: For contributions to the theory and full-bandstructure modeling of semiconductor nanostructures.
Brown, April [2011]
Duke University
Citation: For outstanding contributions to development and application of molecular beam epitaxy to the formation advanced device structures, with particular contributions to the advancement of the strained heterostructures forming modern microwave devices.
Duke University
Citation: For outstanding contributions to development and application of molecular beam epitaxy to the formation advanced device structures, with particular contributions to the advancement of the strained heterostructures forming modern microwave devices.
Cleveland, Jason [2011]
Asylum Research
Citation: For remarkable and lasting contributions to the field of scanning probe microscopy, both academic and commercial.
Asylum Research
Citation: For remarkable and lasting contributions to the field of scanning probe microscopy, both academic and commercial.
Ginley, David [2011]
National Renewable Energy Laboratory
Citation: For sustained scientific contributions in the broad area of solar energy conversion devices and services to the physics community, including chairing and organizing a series of focus sessions on energy related topics and giving invited talks and active participation in outreach to young physicists.
National Renewable Energy Laboratory
Citation: For sustained scientific contributions in the broad area of solar energy conversion devices and services to the physics community, including chairing and organizing a series of focus sessions on energy related topics and giving invited talks and active participation in outreach to young physicists.
Hayes, Robert [2011]
Washington TRU Solutions, LLC
Citation: For furthering the use of nuclear technology in the areas of radiation safety, nuclear engineering and nuclear waste disposal through the use of physical science.
Washington TRU Solutions, LLC
Citation: For furthering the use of nuclear technology in the areas of radiation safety, nuclear engineering and nuclear waste disposal through the use of physical science.
Hong, Minghwei [2011]
National Taiwan University
Citation: For pioneering in III-V semiconductor metal oxide semiconductor field effect transistors including the landmark discovery of high dielectric constant oxide films on GaAs surface with low interface states and unpinned Fermi level, and the first demonstration of inversion-channel GaAs MOSFET, timely for science and technology beyond Si CMOS.
National Taiwan University
Citation: For pioneering in III-V semiconductor metal oxide semiconductor field effect transistors including the landmark discovery of high dielectric constant oxide films on GaAs surface with low interface states and unpinned Fermi level, and the first demonstration of inversion-channel GaAs MOSFET, timely for science and technology beyond Si CMOS.
Huang, Danhong [2011]
Air Force Research Lab - Kirtland
Citation: Significant contributions to our understanding of optical absorption and electron transport properties of quantum devices.
Air Force Research Lab - Kirtland
Citation: Significant contributions to our understanding of optical absorption and electron transport properties of quantum devices.
Kaviany, Massoud [2011]
University of Michigan, Ann Arbor
Citation: For seminal contributions to the understanding of phonon physics and thermal transport in fluids and solids; and for pioneering developments in the semiclassical simulation of electronic and phonon transport.
University of Michigan, Ann Arbor
Citation: For seminal contributions to the understanding of phonon physics and thermal transport in fluids and solids; and for pioneering developments in the semiclassical simulation of electronic and phonon transport.
Khurgin, Jacob [2011]
Johns Hopkins University
Citation: For diverse contributions to understanding the underlying physics and improving the performance of numerous electronic and optical devices, such as semiconductor second-order nonlinear optical generators, intersubband semiconductor lasers and Raman oscillators, slow light, and plasmonic devices.
Johns Hopkins University
Citation: For diverse contributions to understanding the underlying physics and improving the performance of numerous electronic and optical devices, such as semiconductor second-order nonlinear optical generators, intersubband semiconductor lasers and Raman oscillators, slow light, and plasmonic devices.
Klimeck, Gerhard [2011]
Purdue University
Citation: For the development, application, and dissemination of atomistic, quantum simulation tools for nanoelectronic devices.
Purdue University
Citation: For the development, application, and dissemination of atomistic, quantum simulation tools for nanoelectronic devices.
Meinhart, Carl [2011]
University of California, Santa Barbara
Citation: For contributions to the seminal developments of micron resolution particle image velocimetry and free-surface microfluidics for surface enhanced Raman scattering technology, and for providing deeper understanding of the flow of fluids over surfaces in the extremes of microscopic slip and high Reynolds number turbulence.
University of California, Santa Barbara
Citation: For contributions to the seminal developments of micron resolution particle image velocimetry and free-surface microfluidics for surface enhanced Raman scattering technology, and for providing deeper understanding of the flow of fluids over surfaces in the extremes of microscopic slip and high Reynolds number turbulence.
Mitin, Vladimir [2011]
SUNY, Buffalo
Citation: For contributions to phonon enhancement of sensors and detectors and to controlled carrier kinetics in sensors with high responsivity.
SUNY, Buffalo
Citation: For contributions to phonon enhancement of sensors and detectors and to controlled carrier kinetics in sensors with high responsivity.
Narayanan, Vijay [2011]
IBM T.J. Watson Research Center
Citation: For seminal contributions to the science and technology of high dielectric constant oxide materials and metal gate based transistors that have redefined silicon microelectronics.
IBM T.J. Watson Research Center
Citation: For seminal contributions to the science and technology of high dielectric constant oxide materials and metal gate based transistors that have redefined silicon microelectronics.
Schiff, Eric [2011]
Syracuse University
Citation: For pioneering applied physics research on thin film silicon photovoltaic materials and devices.
Syracuse University
Citation: For pioneering applied physics research on thin film silicon photovoltaic materials and devices.
Schuber, Mathias [2011]
University of Nebraska, Lincoln
Citation: For the development of generalized ellipsometry and the invention of the Optical Hall Effect, and their transformative potential for industrial characterization of materials properties, for example in liquid crystal displays and semiconductor device structures.
University of Nebraska, Lincoln
Citation: For the development of generalized ellipsometry and the invention of the Optical Hall Effect, and their transformative potential for industrial characterization of materials properties, for example in liquid crystal displays and semiconductor device structures.
Stalder, Kenneth [2011]
Stalder Tech & Reserch
Citation: In recognition of his application of atomic, molecular and plasma physics in the industrial and commercial sector and of his pioneering work in the area of plasmas created in liquids.
Stalder Tech & Reserch
Citation: In recognition of his application of atomic, molecular and plasma physics in the industrial and commercial sector and of his pioneering work in the area of plasmas created in liquids.
Tritt, Terry [2011]
Clemson University
Citation: For his career-long contributions to the science and engineering of thermoelectric materials, the industrial application of that knowledge, and for the education and promotion of numerous young scientists and engineers.
Clemson University
Citation: For his career-long contributions to the science and engineering of thermoelectric materials, the industrial application of that knowledge, and for the education and promotion of numerous young scientists and engineers.
Weller, Robert [2011]
Vanderbilt University
Citation: For contributions to the understanding of the interactions of radiation with microelectronic materials and devices.
Vanderbilt University
Citation: For contributions to the understanding of the interactions of radiation with microelectronic materials and devices.
Willander, Magnus [2011]
Linkoping University, Norrkoping
Citation: Pioneering work on realization of polymer and silicon-germanium transistors and silicon carbide. Significant contributions on modeling solid and soft nanostructures, and experimental works on nanostructures, particularly zinc oxide nanostructures.
Linkoping University, Norrkoping
Citation: Pioneering work on realization of polymer and silicon-germanium transistors and silicon carbide. Significant contributions on modeling solid and soft nanostructures, and experimental works on nanostructures, particularly zinc oxide nanostructures.