APS Fellowship
The Forum on Industrial and Applied Physics is proud to present a list of members nominated by FIAP and elected to Fellowship in the American Physical Society. Each new fellow is elected after careful and competitive review and recommendation by the FIAP Fellowship Committee, additional review by the APS Fellowship Committee and final approval by the full APS Council.
FIAP Deadline for APS Fellowship Nomination: Friday, May 1, 2009 APS Fellowship InformationAPS Fellows Nominated by FIAP
Alam, Muhammad [2008]
Purdue University
Citation: For fundamental contributions to and innovative computational models for Electronic Transport in Spatially and Temporally Random Systems.
Purdue University
Citation: For fundamental contributions to and innovative computational models for Electronic Transport in Spatially and Temporally Random Systems.
Deen, M. Jamal [2008]
McMaster University
Citation: For significant contributions to noise and physics-based modeling of semiconductor devices and innovations in experiments.
McMaster University
Citation: For significant contributions to noise and physics-based modeling of semiconductor devices and innovations in experiments.
Goyal, Amit [2008]
Oak Ridge National Laboratory
Citation: For leadership and pioneering contributions to the invention, research, and development of high-performance, high temperature superconducting (HTS) wires, culminating in over 50 issued patents and the subsequent technology transfer to the industry.
Oak Ridge National Laboratory
Citation: For leadership and pioneering contributions to the invention, research, and development of high-performance, high temperature superconducting (HTS) wires, culminating in over 50 issued patents and the subsequent technology transfer to the industry.
Harris, Richard [2008]
NIST
Citation: For creating remarkable and practical measurements and standards based on superconducting integrated circuits through technical leadership and personal contributions.
NIST
Citation: For creating remarkable and practical measurements and standards based on superconducting integrated circuits through technical leadership and personal contributions.
Hengehold, Robert [2008]
Air Force Institute of Technology
Citation: For pioneering contributions to semiconductor material characterization, over 30 years of distinguished and dedicated leadership in the development of graduate applied physics programs for military officers, and service to the physics community through APS sectional meetings specifically on applied and industrial physics.
Air Force Institute of Technology
Citation: For pioneering contributions to semiconductor material characterization, over 30 years of distinguished and dedicated leadership in the development of graduate applied physics programs for military officers, and service to the physics community through APS sectional meetings specifically on applied and industrial physics.
Jain, Ravinder K. [2008]
University of New Mexico
Citation: For pioneering contributions in several areas of applied physics, including discovery of plasmon-mediated light-emission from tunnel junctions, seminal studies of nonlinear optics in semiconductors and optical fibers, and the invention of several important ultrashort pulse lasers and fiber lasers.
University of New Mexico
Citation: For pioneering contributions in several areas of applied physics, including discovery of plasmon-mediated light-emission from tunnel junctions, seminal studies of nonlinear optics in semiconductors and optical fibers, and the invention of several important ultrashort pulse lasers and fiber lasers.
Pernisz, Udo [2008]
Dow Corning Corporation
Citation: For his contributions to making siloxane resins a commercial success as spin-on dielectrics in the IC industry, and his investigations of the luminescence of Si-containing organic and inorganic compounds that led to the development of novel materials for photonics applications.
Dow Corning Corporation
Citation: For his contributions to making siloxane resins a commercial success as spin-on dielectrics in the IC industry, and his investigations of the luminescence of Si-containing organic and inorganic compounds that led to the development of novel materials for photonics applications.
Ren, Fan [2008]
University of Florida
Citation: For contributions to the development of device processing technologies for compound semiconductor devices based on GaAs, InP, ZnO and GaN.
University of Florida
Citation: For contributions to the development of device processing technologies for compound semiconductor devices based on GaAs, InP, ZnO and GaN.
Watkins, Simon [2008]
Simon Fraser University
Citation: For groundbreaking research on the growth and properties of high quality narrow-gap semiconductor heterostructures by organometallic vapor phase epitaxy (OMVPE) and their application to high-speed semiconductor devices.
Simon Fraser University
Citation: For groundbreaking research on the growth and properties of high quality narrow-gap semiconductor heterostructures by organometallic vapor phase epitaxy (OMVPE) and their application to high-speed semiconductor devices.
Whelan, David [2008]
Boeing Company
Citation: For over 25 years of innovation and research conducted in academic, national laboratory and industrial research environments, development of the B2 design and instrumentation, air to air synthetic aperture radar, multi-spectral radar imaging, and visionary technical leadership at both DARPA and The Boeing Company.
Boeing Company
Citation: For over 25 years of innovation and research conducted in academic, national laboratory and industrial research environments, development of the B2 design and instrumentation, air to air synthetic aperture radar, multi-spectral radar imaging, and visionary technical leadership at both DARPA and The Boeing Company.
Williams, Clayton [2008]
University of Utah
Citation: For his pioneering and sustained contributions to the field of Scanning Capacitance Microscopy and to the development of the Scanning Capacitance Microscope for both quantitative two-dimensional carrier and dopant profiling, and for the characterization and failure analysis of semiconductor materials and devices (including VLSI products) on a nanometer scale.
University of Utah
Citation: For his pioneering and sustained contributions to the field of Scanning Capacitance Microscopy and to the development of the Scanning Capacitance Microscope for both quantitative two-dimensional carrier and dopant profiling, and for the characterization and failure analysis of semiconductor materials and devices (including VLSI products) on a nanometer scale.
Zhang, Xiang [2008]
University of California, Berkeley
Citation: For the pioneering demonstration of the optical Superlens and Hyperlens for nano-optics; the development of concepts of metamaterials, plasmonic, and far IR magnetism; seminal contributions to the plasmonic lithography.
University of California, Berkeley
Citation: For the pioneering demonstration of the optical Superlens and Hyperlens for nano-optics; the development of concepts of metamaterials, plasmonic, and far IR magnetism; seminal contributions to the plasmonic lithography.
