Prize Recipient

Chris G. Van de Walle
XEROX

Citation:

"For his incisive theoretical contributions to the understanding of the behavior of hydrogen in semiconductors and heterostructure energy band diagrams and the exceptional exposition of this work in the scientific community."

Background:

Chris G. Van de Walle is a Principal Scientist at the Xerox Palo Alto Research Center. He received his Ph.D. in 1986 from Stanford University, where he was awarded the F. E. Terman Prize from the School of Engineering. Before joining Xerox PARC in 1991, Dr. Van de Walle was a postdoctoral scientist at the IBM T. J. Watson Research Center in Yorktown Heights, New York (1986-1988), a Senior Member of Research Staff at Philips Laboratories in Briarcliff Manor, New York (1988-1991), and an Adjunct Professor of Materials Science at Columbia University (1991). Dr. Van de Walle develops and employs first-principles techniques to model the structure and behavior of semiconductors. He has performed extensive studies of semiconductor interfaces (including the development of a widely used model for band offsets) and of defects and impurities in semiconductors, with particular emphasis on doping problems and on the role of hydrogen. In recent years he has focused his attention on wide-band-gap semiconductors. Dr. Van de Walle has published over 160 research papers, has four patents, has given more than 50 invited talks at international conferences, and has chaired three conferences. He is a Fellow of the American Physical Society, a Senior Member of the IEEE, and the recipient of a Humboldt Award for Senior US Scientist.

Selection Committee:

Leonard Feldman (Chair), Patricia M Mooney, Alan Reginald Bishop, Ellen Williams, Dan Dahlberg