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Quantum well states formed in the topological insulator Bi2Se3 which have a very large spin splitting. The size of the splitting is much bigger than in other semiconductors and this finding might open a new way to design a room-temperature nano-scale spin transistor. Spin transistors have the potential to store more data in less space and consume less power.
Journalists wishing to reproduce this image for news stories about related research should include the following image credit: Professor Philip Hofmann, Department of Physics and Astronomy, Institute for Storage Ring Facilities and Interdisciplinary Nanoscience Center at Aarhus University.