World's Fastest Transistors

March Meeting 2010

Contact

James Riordon, APS
301-209-3238
Jason Socrates Bardi, AIP
301-209-3091
Phillip Schewe, AIP
301-209-3092

 

Meeting Press Releases


A "Periodic Table" of Biosensors
A Nanoscale Bean-Counter for Viruses
AC/DC Power Converter as Wide as a Human Hair
Blood Clot Glue
Cooperation, Cheating, and the Games that Yeast Play
Heroines of Modern Physics
Highlighted Sessions
Infrared Pictures with a Digital Camera
Magnetic Tuberculosis Detector
Nanotube Toxicity
New Technique for Measuring the Strength of a Cell
Optimization and Biological Physics
Press Conference Schedule
Solar Cells and Cities of The Future
Solid Metal Batteries
The Flow of Particles in a Room
Topological Insulators
Using DNA as Building Blocks

WASHINGTON, D.C. — For fifty years the silicon transistor has steadily grown smaller, allowing manufacturers to cram millions and millions more transistors onto their computer chips. But experts forecast that the silicon transistor will soon reach its physical limits, so a race to develop the next transistor technology is afoot. Phaedon Avouris, manager of IBM's Nanometer Scale Science and Technology Research Division, will present his team's cutting-edge alternative to silicon: transistors made of graphene, a one-atom-thick layer of carbon that is highly conductive to electricity and can be turned on and off very quickly. As recently reported in Science, the team has created high-frequency 100 gigahertz RF graphene transistors that could be useful for high-speed communications devices and faster than silicon devices of the same size.

They are also working to solve a problem that currently prevents graphene from being used in digital electronic devices -- its lack of a band gap, which means that current continues to flow in a graphene device even after it has been turned off. A computer chip packed with graphene transistors would have trouble reliably identifying which ones were on and which were off. To improve this situation, IBM's researchers stacked two parallel layers of graphene on top of each other, an arrangement theoretically predicted to provide a band gap upon application of a high perpendicular electric field. They achieved an on/off current ratio of 100:1 at room temperature, not quite good enough yet for digital electronics but about twenty times better than the typical on/off ratio of single-layer graphene. "Creating a band gap in graphene is probably one of the most important and tantalizing research topics in the graphene community since it may ultimately enable new applications in digital electronics, pseudospintronics, terahertz technology, and infrared nanophotonics," the researchers report.


Related March Meeting Session

Gray arrow   Abstract: X21.00004 : Graphene Electronics and Optoelectronics




About APS

The American Physical Society is the leading professional organization of physicists, representing more than 48,000 physicists in academia and industry in the United States and internationally. APS has offices in College Park, MD (Headquarters), Ridge, NY, and Washington, D.C. 

About AIP

Headquartered in College Park, MD, the American Institute of Physics is a not-for-profit membership corporation chartered in New York State in 1931 for the purpose of promoting the advancement and diffusion of the knowledge of physics and its application to human welfare.