American Physical Society
American Physical Society Sites|APS|Journals|PhysicsCentral|Physics
 
Login| Become a Member|Contact Us
  • Publications
    • Journals of the American Physical Society
    • APS News
    • Physics
    • Physics Today
    • Capitol Hill Quarterly
    • Other APS Publications
    • Reciprocal Society Newsletters
  • Meetings & Events
    • March Meeting
    • April Meeting
    • Meeting Calendar
    • Abstract Submission
    • Archives of the Bulletin of the American Physical Society
    • Policies & Guidelines
    • Meeting Presentations
    • Virtual Press Rooms
  • Programs
    • Education
    • International Affairs
    • Physics Outreach
    • Women in Physics
    • Minorities in Physics
    • Prizes, Awards & Fellows
  • Membership
    • Join APS
    • Renew Membership
    • Member Directory
    • My Member Profile
    • Member Services
    • APS Units
  • Policy & Advocacy
    • Issues
    • Reports & Studies
    • APS Statements
    • Advocacy Tools
    • Advocacy Resources
    • Fellowships & Fellows
    • Contact APS Public Affairs
  • Careers In Physics
    • Physics Jobs
    • Becoming a Physicist
    • Career Guidance
    • Physics Careers Statistical Data
  • About APS
    • Mission Statement
    • Society Governance
    • Society History
    • Donate to APS
    • APS Jobs
    • Contact Us
Meetings & Events
  • March Meeting
    • Registration
    • Scientific Program
    • Housing
    • Events & Activities
    • Services & Support
    • Exhibits
  • April Meeting
  • Meeting Calendar
  • Abstract Submission
  • Archives of the Bulletin of the American Physical Society
  • Policies & Guidelines
  • Meeting Presentations
  • Virtual Press Rooms

Email Email   Print Print     Share Share
 
Home   |   Meetings & Events   |   March Meeting   |   Virtual Press Rooms   |   2010   |   Image Gallery   |   Auger Recombination in Nitride Semiconductors

Auger Recombination in Nitride Semiconductors

March Meeting 2010

Schematic representation of recombination in a nitride semiconductor


Abstract

H5.00002: "Auger recombination and free-carrier absorption in nitrides from first principles"

Presented Tuesday, March 16, 2010

Emmanouil Kioupakis
Patrick Rinke
Kris Delaney
Chris G. Van de Walle

Materials Department
University of California, Santa Barbara
Santa Barbara, CA 93106

Auger Recombination in Nitride Semiconductors


Computational scientists at the University of California, Santa Barbara (UCSB), have provided compelling evidence that Auger recombination contributes strongly to "droop", the decline in external quantum efficiency observed at higher drive currents in nitride LEDs. The researchers demonstrate, by means of rigorous quantum-mechanical calculations in which individual loss processes can explicitly be isolated, that Auger recombination is a serious loss mechanism in wurtzite InGaN. 

Auger recombination had previously been proposed as a loss mechanism based on experiments; however, experimentally it is very difficult to discriminate between different nonradiative processes, and the role of Auger losses had remained controversial. The Auger process is a nonradiative process, in which an electron recombines with a hole, but instead of emitting a photon, the process results in the excitation of another carrier to a higher-energy state. The researchers have also investigated other loss mechanisms, including free-carrier absorption. As in the case of the Auger recombination calculations, this is the first time that phonon-assisted indirect absorption processes have been explicitly evaluated from first principles, for any material. 

The results show that free-carrier absorption is not an important mechanism in the case of LEDs, but it can account for the previously puzzling losses observed in nitride-based lasers. With these mechanisms now identified and quantified future developments can focus on removing or reducing these losses.

References

"Auger recombination rates in nitrides from first principles", K. T. Delaney, P. Rinke, and C. G. Van de Walle, Appl. Phys. Lett. 94, 191109 (2009).

Usage Information

Reporters may freely use this image as long as they include the following credit: "Image courtesy of K. T. Delaney, P. Rinke, and C. G. Van de Walle/UC Santa Barbara".

For further information, contact:
Jason Bardi
(301) 209-3091

Home | APS Jobs | Media Center | Terms of Use | Site Map

Follow APS: Feeds Facebook LinkedIn Wordpress Twitter Google Plus YouTube

© 2013 American Physical Society