Tutorial #2

Spintronics

Pre-registration only — no on-site registration for tutorials

Sunday, March 9
8:30 a.m. - 12:30 p.m.
La Galerie 3
New Orleans Marriott Hotel
555 Canal Street

Who Should Attend
Principal investigators in academia and industry, program managers, students, postdocs, and other scientists who are interested in learning about basic and applied research involving spin polarized transport. Students will need some knowledge of solid state physics.

Tutorial Description
“Spintronics” is the emerging field of basic and applied research supporting electronic device structures that utilize electronic spin for new and unique functionality. A primary application for conventional digital electronics is low power, ultrahigh density nonvolatile magnetoresistive random access memory (MRAM). Freescale has been marketing MRAM chips successfully since July, 2006. MRAM offers nonvolatility; durability of more than 1015 cycles; read and write times of 35 nsec or faster; and read and write operating energies of order 100 pjoule. Topics in basic research include magnetization reversal by spin torque switching, stimulated emission of radiation in magnetic nanostructures, and current biased domain wall motion. Biotechnology offers an increasingly large variety of novel applications and opportunities.

Topics
Spin torque effects, spin wave amplification by stimulated emission of radiation
Current induced domain wall motion
High resolution imaging of magnetic thin films, domain wall motion
Magnetic Tunnel Junctions, MRAM, thermally assisted writing
Nanomagnetic biosensors and molecular diagnostics

Instructors
Prof. Luc Berger, Carnegie Mellon Univ., Pittsburgh PA
Prof. John Chapman, Univ. of Glasgow, Glasgow UK
Prof. Bernard Dieny, CEA/CNRS, Grenoble, France
Prof. Shan Wang, Stanford University, Stanford, CA

Organizer
Mark Johnson, Naval Research Laboratory